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TGA4906-SM
4 Watt Ka-Band Packaged HPA
Key Features
* * * * * *
Frequency Range: 28 - 31 GHz Psat: 36 dBm Gain: 23 dB Return Loss: -12 dB Bias: Vd = 6 V, Idq = 1.6 A, Vg = -0.75 V Typical Package Dimensions: 5 x 5 x 1.19 mm
Measured Performance
Bias conditions: Vd = 6 V, Idq = 1.6 A, Vg = -0.75 V Typical
Primary Applications
*
Ka-Band VSAT
38 Psat & P1dB (dBm) 37 36 35 34 33 32 31 30 28 28.5 29 29.5 30 Frequency (GHz) 30.5 31
Psat P1dB
Product Description
The TriQuint TGA4906-SM is a compact 4 Watt High Power Amplifier for Ka-band applications. The part is designed using TriQuint's proven standard 0.15 um gate Power pHEMT production process. The TGA4906-SM provides a nominal 36 dBm of output power at an input power level of 14 dBm with a small signal gain of 23 dB. The TGA4906-SM is a QFN 5x5 mm surface mount packaged. It is ideally suited for low cost emerging markets such as base station transmitters for satellite ground terminals and point to point radio. Lead-Free & RoHS compliant. Evaluation boards are available upon request.
24 22 20 18 16 14 12 10 8 6 4 28
Gain IRL ORL
0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 29 29.5 30 30.5 31 Frequency (GHz)
28.5
Return Loss (dB)
Gain (dB)
Datasheet subject to change without notice. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2008 (c) Rev -
1
TGA4906-SM
Table I Absolute Maximum Ratings 1/
Symbol
Vd-Vg Vd Vg Id Ig Pin Drain Voltage Gate Voltage Range Drain Current Gate Current Range Input Continuous Wave Power
Parameter
Drain to Gate Voltage
Value
11 V 6V -5 to 0 V 3.7 A -15 to 202 mA 26 dBm
Notes
2/
2/
2/
1/
These ratings represent the maximum operable values for this device. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device and / or affect device lifetime. These are stress ratings only, and functional operation of the device at these conditions is not implied. Combinations of supply voltage, supply current, input power, and output power shall not exceed Pd (as listed in "Thermal Information").
2/
Table II Recommended Operating Conditions
Symbol
Vd Idq Id_Drive Vg 1/ Drain Voltage Drain Current Drain Current under RF Drive Gate Voltage
Parameter 1/
Value
6V 1.6 A 3.0 A -0.75 V
See assembly diagram for bias instructions.
2 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2008 (c) Rev -
TGA4906-SM
Table III RF Characterization Table
Bias: Vd = 6 V, Idq = 1.6 A, Vg = -0.75 V Typical SYMBOL
Gain IRL ORL Psat
PARAMETER
Small Signal Gain Input Return Loss Output Return Loss Saturated Output Power Gain Temp Coefficient
TEST CONDITIONS
f = 28 - 31 GHz f = 28 - 31 GHz f = 28 - 31 GHz f = 28 - 31 GHz f = 28 - 31 GHz
NOMINAL
23 -12 -12 36 -0.04
UNITS
dB dB dB dBm dB/0C
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TGA4906-SM
Table IV Power Dissipation and Thermal Properties
Parameter
Maximum Power Dissipation
Test Conditions
Tbaseplate = 85 C
Value
Pd = 18.5 W Tchannel = 150 C Tm = 1.0E+6 Hrs jc = 3.5 (C/W) Tchannel = 119 C Tm = 4.1E+7 Hrs jc = 3.5 (C/W) Tchannel = 134 C Tm = 6.4E+6 Hrs
Notes
1/ 2/
Thermal Resistance, jc
Vd = 6 V Id = 1600 mA Pd = 9.6 W Tbaseplate = 85 C Vd = 6 V Id = 3 A Pout = 4 W (36 dBm) Pd = 14 W Tbaseplate = 85 C 30 Seconds
Thermal Resistance, jc Under RF Drive
Mounting Temperature Storage Temperature 1/
260 C -65 to 150 C
For a median life of 1E+6 hours, Power Dissipation is limited to Pd(max) = (150 C - Tbase C)/jc.
2/
Channel operating temperature will directly affect the device median time to failure (MTTF). For maximum life, it is recommended that channel temperatures be maintained at the lowest possible levels. Tbase is defined @ package pin # 33 (ground)
3/
Power De-rating Curve
20 18 16 14 12 10 8 6 4 2 0 -50 -25 0 Power Dissipated (W) Tm= 1.0E+6 Hrs
25 50 75 100 125 150 175 200 Baseplate Temp (C)
4
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2008 (c) Rev -
TGA4906-SM
Measured Data
Bias conditions: Vd = 6 V, Idq = 1.6 A, Vg = -0.75 V Typical
Gain (dB)
30 27 24 21 18 15 12 9 6 3 0 20 22 24 26 28 30 32 34 36 Frequency (GHz)
Return Loss (dB)
0 -3 -6 -9 -12 -15 -18 -21 -24 -27 -30 20 22 24 26 28 30 32 Frequency (GHz)
IRL ORL
34
36
5 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2008 (c) Rev -
TGA4906-SM
Measured Data
Bias conditions: Vd = 6 V, Idq = 1.6 A, Vg = -0.75 V Typical
38 37 Psat & P1dB (dBm) 36 35 34 33 32 31 30 25 26 27 28 29 30 31 32 33 Frequency (GHz)
Psat P1dB
40 Pout (dBm), Gain (dB), PAE (%) 35 30 25 20 15 10 5 0 -20 -15 -10 -5 0 5 10 15 20 Input Power (dBm)
Pout @ 30GHz Gain @ 30GHz PAE @ 30GHz Id @ 30GHz
4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 Id (A)
6 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2008 (c) Rev -
TGA4906-SM
Measured Data
Bias conditions: Vd = 6 V, Idq = 1.6 A, Vg = -0.75 V Typical
30 28 26 24 22 20 18 16 14 12 10 8 6 20 22 24 26 28 30 32 Frequency (GHz)
- 40 C +25 C +75 C
Gain (dB)
34
36
38 37 36 Psat (dBm) 35 34 33 32 31 30 25 26 27 28 29 30 31
- 40C + 25C + 75C
32
Frequency (GHz)
7 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2008 (c) Rev -
TGA4906-SM
Electrical Schematic
Vd_3 top Vd_2 top Vd_1 top Vd_2 bottom Vd_3 bottom
30
27
14
26
15
TGA4906-SM
RF Input
4
21
RF Output
11
Vg_1,2,3
Bias Procedures
Bias-up Procedure Vg set to -1.5 V Vd_set to +6 V Adjust Vg more positive until Idq is 1.6 A. This will be ~ Vg = -0.75 V Apply RF signal to input Bias-down Procedure Turn off RF supply Reduce Vg to -1.5V. Ensure Idq ~ 0 mA Turn Vd to 0 V
Turn Vg to 0 V
8 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2008 (c) Rev -
TGA4906-SM
Package Pinout
Pin #1 DOT
Pin
4 21 14, 15, 26, 27, 30 11 1, 8, 9, 16, 17, 24, 25, 32, 33 2, 3, 5, 6, 7, 10, 12, 13, 18, 19, 20, 22, 23, 28, 29, 31
Description
RF Input RF Output Vd Vg Ground N/C
9 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2008 (c) Rev -
TGA4906-SM
Mechanical Drawing
Units: millimeters Pkg x, y, z size tolerance: +/- 0.050
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
10 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2008 (c) Rev -
TGA4906-SM
Recommended Assembly Board
C1 R1 C4
C2 C3 R2 R3 C5C6
See detail tuning on page 12
Board is 8mil thick RO4003 with 0.5oz copper cladding. Board is soldered on metal block and adequate heatsinking is required for 14 W power dissipation.
8mils diameter Copper filled vias
C7
C8 C9
R7 R4 R5 R6 C12 C10 C11
Part
C1, C2, C3, C10, C11, C12 C4, C5, C6, C7, C8, C9 R1, R2, R3, R4, R5, R6 R7
Description
1 uF Capacitor (0603) 0.01 uF Capacitor (0402) 10 ohm Resistor (0402) 22 ohm Resistor (0402)
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
11 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2008 (c) Rev -
TGA4906-SM
Recommended Assembly Board (Con't)
Detail of PCB Tuning
147.2 54.6 10.8 29 x 23.5 38.5 6.6 50 x 57.5 17.5
43 x 5 20 x 57.5 8 x 35
5 x 18
All units are in mils
12 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2008 (c) Rev -
TGA4906-SM
Assembly Notes
Recommended Surface Mount Package Assembly * Proper ESD precautions must be followed while handling packages. * Clean the board with acetone. Rinse with alcohol. Allow the circuit to fully dry. * TriQuint recommends using a conductive solder paste for attachment. Follow solder paste and reflow oven vendors' recommendations when developing a solder reflow profile. Typical solder reflow profiles are listed in the table below. * Hand soldering is not recommended. Solder paste can be applied using a stencil printer or dot placement. The volume of solder paste depends on PCB and component layout and should be well controlled to ensure consistent mechanical and electrical performance. * Clean the assembly with alcohol.
Typical Solder Reflow Profiles
Reflow Profile
Ramp-up Rate Activation Time and Temperature Time above Melting Point Max Peak Temperature Time within 5 C of Peak Temperature Ramp-down Rate
SnPb
3 C/sec 60 - 120 sec @ 140 - 160 C 60 - 150 sec 240 C 10 - 20 sec 4 - 6 C/sec
Pb Free
3 C/sec 60 - 180 sec @ 150 - 200 C 60 - 150 sec 260 C 10 - 20 sec 4 - 6 C/sec
Ordering Information
Part TGA4906-SM Package Style QFN 5x5 Surface Mount
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
13 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2008 (c) Rev -

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